This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA2162G
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC6036G
Package
Features
Code
Low collector-emitter saturation voltage VCE(sat)
SSS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing
SSSMini3-F2
Marking Symbol: 2U
Pin Name
1. Base
Absolute Maximum Ratings Ta = 25°C
2. Emitter
3. Collector
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
–15
Unit
V
–12
V
–5
V
–500
–1
mA
A
Peak collector current
ICP
Collector power dissipation
Junction temperature
PC
100
mW
°C
°C
Tj
125
Storage temperature
T
stg
–55 to +125
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
–15
–12
–5
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
VCBO IC = –10 mA, IE = 0
VCEO IC = –1 mA, IB = 0
VEBO IE = –10 mA, IC = 0
V
V
ICBO
hFE
VCB = –10 V, IE = 0
– 0.1
680
mA
VCE = –2 V, IC = –10 mA
270
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = –200 mA, IB = –10 mA
–250
mV
MHz
fT
VCB = –2 V, IE = 10 mA, f = 200 MHz
200
4.5
Collector output capacitance
Cob
VCB = –10 V, f = 1 MHz
pF
(Common base, input open circuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date : May 2007
SJC00384AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
SSSMini3-F2
Unit: mm
1.20 0.05
0.30 +−00..0025
3
2
1
0.13 +−00..0025
0.20 +−00..0025
(0.4)
(0.4)
0.80 0.05
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