This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SB1679
Silicon PNP epitaxial planar type
For low-frequency amplification
Unit: mm
+0.10
+0.1
–0.0
0.15
0.3
–0.05
■ Features
3
• Large collector output capacitance (Common base, input open cir-
cuited) Cob
• Low collector-emitter saturation voltage VCE(sat)
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
1
2
(0.65) (0.65)
1.3 0.1
2.0 0.2
■ Absolute Maximum Ratings Ta = 25°C
10°
Parameter
Symbol
Rating
−15
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
1: Base
2: Emitter
3: Collector
−10
V
−7
V
EIAJ: SC-70
SMini3-G1 Package
Collector current
IC
ICP
PC
Tj
− 0.5
−1
A
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
A
Marking Symbol: 3V
150
mW
°C
°C
150
Tstg
−55 to +150
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
−15
−10
−7
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
IC = −10 µA, IE = 0
IC = −1 mA, IB = 0
V
IE = −10 µA, IC = 0
VCB = −10 V, IE = 0
VCE = −2 V, IC = − 0.5 A
VCE = −2 V, IC = −1 A
V
−100
nA
1
2
Forward current transfer ratio *
hFE1
hFE2
130
60
350
*
1
Collector-emitter saturation voltage *
VCE(sat) IC = − 0.4 A, IB = −8 mA
− 0.16 − 0.30
V
V
1
Base-emitter saturation voltage *
VBE(sat) IC = − 0.4 A, IB = −8 mA
− 0.8
130
22
−1.2
Transition frequency
fT
VCB = −10 V, IE = 50 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
MHz
pF
Collector output capacitance
Cob
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. 1: Pulse measurement
*
2: Rank classification
*
Rank
R
S
hFE1
130 to 220
180 to 350
Publication date: February 2003
SJC00097BED
1
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
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ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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