This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC3937G
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
■ Features
■ Package
• Code
SMini3-F2
• Marking Symbol: 2W
• Pin Name
1. Base
• Low noise figure NF
• High forward transfer gain S21e2
• High transition frequency fT
• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
15
10
V
2
80
V
Collector current
IC
PC
Tj
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
150
150
Tstg
−55 to +150
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Conditions
Min
Typ
Max
1
Unit
µA
µA
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
VCB = 15 V, IE = 0
VEB = 1 V, IC = 0
1
VCE = 8 V, IC = 20 mA
50
80
300
280
VCE = 1 V, IC = 3 mA
Transition frequency
VCE = 8 V, IC = 20 mA, f = 0.8 GHz
VCB = 10 V, IE = 0, f = 1 MHz
6
GHz
pF
Collector output capacitance
Cob
0.7
1.2
(Common base, input open circuited)
Forward transfer gain
Maximum unilateral power gain
Noise figure
S21e2 VCE = 8 V, IC = 20 mA, f = 0.8 GHz
13
14
dB
dB
dB
GUM
NF
VCE = 8 V, IC = 20 mA, f = 0.8 GHz
VCE = 8 V, IC = 7 mA, f = 0.8 GHz
1.0
1.7
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: April 2007
SJC00363AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2
Unit: mm
2.00 0.20
0.30 +−00..0025
3
1
2
0.13 +−00..0025
(0.65)
(0.65)
1.30 0.10
(5°)
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