This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC4805G
Silicon NPN epitaxial planar type
For 2 GHz band low-noise amplification
■ Package
■ Features
•
Code
• High transition frequency fT
SMini3-F2
Marking Symbol: 3S
Pin Name
1: Base
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
•
•
2: Emitter
3: Collector
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
15
10
V
2
65
V
Collector current
IC
PC
Tj
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
150
150
Tstg
−55 to +150
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
ICBO
IEBO
hFE
Conditions
Min
Typ
Max
1
Unit
µA
µA
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *
Transition frequency
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
1
VCE = 8 V, IC = 20 mA
50
300
fT
VCE = 8 V, IC = 15 mA, f = 1.5 GHz
7.0
8.5
0.6
GHz
pF
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
1.0
(Common base, input open circuited)
Forward transfer gain
Maximum unilateral power gain
Noise figure
S21e2 VCE = 8 V, IC = 15 mA, f = 1.5 GHz
7
9
dB
dB
dB
GUM
NF
VCE = 8 V, IC = 15 mA, f = 1.5 GHz
10
2.2
VCE = 8 V, IC = 7 mA, f = 1.5 GHz
3.0
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
Q
R
S
No-rank
50 to 300
3S
hFE
50 to 120
3SQ
100 to 170
3SR
150 to 300
3SS
Marking symbol
Product of no-rank is not classified and have no indication for rank.
Publication date: May 2007
SJC00367AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2
Unit: mm
2.00 0.20
0.30 +−00..0025
3
1
2
0.13 +−00..0025
(0.65)
(0.65)
1.30 0.10
(5°)
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
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Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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