This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1821A
Silicon NPN epitaxial planar type
For high breakdown voltage low-frequency and low-noise
amplification
Package
Code
Features
High collector-emitter voltage (Base open) VCEO
Low noise voltage NV
SMini3-G1
S-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
Pin Name
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings Ta = 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
Marking Symbol: L
185
185
V
5
50
V
mA
mA
mW
°C
Peak collector current
ICP
100
Collector power dissipation
Junction temperature
PC
150
Tj
150
Storage temperature
T
stg
–55 to +150
°C
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
185
5
Typ
Max
Unit
V
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
VCEO IC = 100 mA, IB = 0
VEBO IE = 10 mA, IC = 0
V
ICBO
hFE
VCB = 100 V, IE = 0
1
330
1
mA
VCE = 5 V, IC = 10 mA
130
VCE(sat) IC = 30 mA, IB = 3 mA
V
fT
VCB = 10 V, IE = –10 mA, f = 200 MHz
150
2.3
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
pF
(Common base, input open circuited)
VCB = 10 V, IC = 1 mA, GV = 80 dB,
Noise voltage
NV
150
mV
Rg = 100 kΩ, Function = FLAT
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
R
S
hFE
130 to 220
185 to 330
Publication date : October 2008
SJC00425AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1821A
SMini3-G1
Unit: mm
+0.1
−0.0
+0.10
−0.05
0.3
0.15
3
1
2
(0.65)
(0.65)
1.3 ±0.1
2.0 ±0.2
SJC00425AED
3
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semiconductors described in this book
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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