This product complies with the RoHS Directive (EU 2002/95/EC).
Zener Diodes
MAZ9xxxH Series
Silicon planar type
Unit: mm
+0.10
–0.05
0.40
3
+0.10
0.16
For surge absorption circuit
–0.06
■ Features
•
•
Two elements anode-common type
Power dissipation PD : 200 mW
1
2
(0.95) (0.95)
1.9 0.1
+0.20
2.90
–0.05
■ Absolute Maximum Ratings Ta = 25°C
10˚
Parameter
Power dissipation *
Junction temperature
Storage temperature
Symbol
PD
Rating
200
Unit
mW
°C
Tj
150
1: Cathode 1
2: Cathode 2
Tstg
−55 to +150
°C
3: Anode
Mini3-G1 Package
Note) : PD = 200 mW achieved with a printed circuit board.
*
EIAJ: SC-59
Internal Connection
3
1
2
■ Common Electrical Characteristics Ta = 25°C 3°C
Parameter
Zener voltage*
Symbol
VZ
Conditions
Min
Typ
Max
Unit
V
IZ
Specified value
Specified value
Specified value
Specified value
Refer to the list of the
electrical characteristics
within part numbers
Zener rise operating resistance
Zener operating resistance
Reverse current
RZK
RZ
IZ
Ω
IZ
Ω
IR
VR
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Electrostatic breakdown voltage: 10 kV
Test method: IEC1000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
3. *: The temperature must be controlled 25°C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25°C)
VZ guaranted 20 ms after current flow.
Publication date: November 2005
SKE00008DED
1
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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Consult our sales staff in advance for information on the following applications:
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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